학술논문
Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR.
Document Type
Article
Author
Source
Subject
*SEMICONDUCTORS
*SURFACE emitting lasers
*DISTRIBUTED Bragg reflectors
*DIELECTRICS
*MICROFABRICATION
*COMPARATIVE studies
*WAVELENGTHS
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Language
ISSN
1063-7826
Abstract
Single-spatial-mode semiconductor vertical-cavity surface-emitting lasers (VCSELs) with a non-planar upper (output) dielectric distributed Bragg reflector (DBR) for the 850 nm spectral region are fabricated. The suggested design provides stable single-mode generation in the entire range of working currents, limited by overheating of the active region. Devices with intracavity contacts and a comparatively large current-aperture diameter (5-6 μm) exhibit single-mode lasing at a wavelength of 840-845 nm in the continuous-wave mode at room temperature with threshold currents of 1.2-1.3 mA, a differential efficiency of 0.5-0.55 mW mA, and anoutput power of up to 2 mW. [ABSTRACT FROM AUTHOR]