학술논문
Ultra-low specific contact resistivity (1.4×10-9 Ωcm2 ) for metal contacts on in-situ Ga-doped Ge0.95 Sn0.05 film.
Document Type
Article
Author
Source
Subject
*MOLECULAR beam epitaxy
*SEMICONDUCTOR doping
*ION implantation
*SURFACE segregation
*SUBSTRATES (Materials science)
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Language
ISSN
0021-8979
Abstract
A heavily Ga-doped Ge0.95Sn0.05 layer was grown on the Ge (100) substrate by molecular beam epitaxy (MBE), achieving an active doping concentration of 1.6×1020 cm-3 without the use of ion implantation and high temperature annealing that could cause Sn precipitation or surface segregation. An advanced nano-scale transfer length method was used to extract the specific contact resistivity ρc between the metal and the heavily doped p-Ge0.95Sn0.05 layer. By incorporating Sn into Ge and in-situ Ga doping during the MBE growth, an ultra-low ρc of 1.4×10-9Ω.cm2 was achieved, which is 50% lower than the ρc of p+-Ge control and is also the lowest value obtained for metal/p-type semiconductor contacts. [ABSTRACT FROM AUTHOR]