학술논문
Coexistence of nonvolatility and volatility in Pt/Nb-doped SrTiO3/In memristive devices.
Document Type
Article
Source
Subject
*NONVOLATILE memory
*COMPUTER logic
*EVAPORATION (Chemistry)
*HYSTERESIS loop
*INTERFACES (Physical sciences)
*ELECTRIC insulators & insulation
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Language
ISSN
0022-3727
Abstract
Memristive devices are triggering innovations in the fields of nonvolatile memory, digital logic, analogue circuits, neuromorphic engineering, and so on. Creating new memristive devices with unique characteristics would be significant for these emergent applications. Here we report the coexistence of nonvolatility and volatility in Pt/Nb-doped SrTiO3 (NSTO)/In memristive devices. The Pt/NSTO interface contributes a nonvolatile resistive switching behaviour, whereas the NSTO/In interface displays a volatile hysteresis loop. Combining the two interfaces in the Pt/NSTO/In devices leads to the unique coexistence of nonvolatility and volatility. The results imply more opportunities to invent new memristive devices by engineering both interfaces in metal/insulator/metal structures. [ABSTRACT FROM AUTHOR]