학술논문
Automotive 2.1 μm Full-Depth Deep Trench Isolation CMOS Image Sensor with a 120 dB Single-Exposure Dynamic Range †.
Document Type
Article
Author
Source
Subject
*CMOS image sensors
*IMAGE sensors
*PIXELS
*TRENCHES
*STRAY currents
*SIGNAL-to-noise ratio
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Language
ISSN
1424-8220
Abstract
An automotive 2.1 μm CMOS image sensor has been developed with a full-depth deep trench isolation and an advanced readout circuit technology. To achieve a high dynamic range, we employ a sub-pixel structure featuring a high conversion gain of a large photodiode and a lateral overflow of a small photodiode connected to an in-pixel storage capacitor. With the sensitivity ratio of 10, the expanded dynamic range could reach 120 dB at 85 °C by realizing a low random noise of 0.83 e- and a high overflow capacity of 210 ke-. An over 25 dB signal-to-noise ratio is achieved during HDR image synthesis by increasing the full-well capacity of the small photodiode up to 10,000 e- and suppressing the floating diffusion leakage current at 105 °C. [ABSTRACT FROM AUTHOR]