학술논문
Effects of misfit dislocations and thermally induced strain on the film properties of heteroepitaxial GaAs on Si.
Document Type
Article
Author
Source
Subject
*DISLOCATIONS in crystals
*GALLIUM arsenide
*THIN films
*
*
Language
ISSN
0021-8979
Abstract
Presents information on a study which examined the effect of misfit dislocations and large internal stresses on the film properties of heteroepitaxial gallium arsenide on silicon. Methodology of the study; Results and discussion; Conclusions.