학술논문
The effect of thickness on the properties of Zr-Hf-N thin films prepared by reactive co-magnetron sputtering.
Document Type
Article
Author
Source
Subject
*THIN films
*REACTIVE sputtering
*SILICON nitride
*SPUTTER deposition
*GAS flow
*SILICON wafers
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Language
ISSN
0094-243X
Abstract
Zirconium hafnium nitride (Zr-Hf-N) thin films were deposited on silicon wafer substrates by reactive co-magnetron sputtering with varying deposition time. The sputtering currents of Zr and Hf targets were kept constant at 800 and 600 mA, whereas the Ar and N2 gas flow rate were fixed at 36 and 3.5 sccm, respectively. The crystal structure determination revealed that the obtained Zr-Hf-N thin films can be indexed as ZrHfN2. Microstructure and surface morphology exhibit columnar structure. The nanohardness measurements suggested that the hardness was exponentially decreasing as the thickness was linearly increased. [ABSTRACT FROM AUTHOR]