부산대학교 도서관

Present p-type ZnO films tend to exhibit high resistivity and low carrier concentration, and they revert to their natural n-type state within days after deposition. One approach to grow higher quality p-type ZnO is by codoping the ZnO during growth. This article describes recent results from the growth and characterization of Zr–N codoped p-type ZnO thin films by pulsed laser deposition (PLD) on (0001) sapphire substrates. For this work, both N-doped and Zr–N codoped p-type ZnO films were grown for comparison purposes at substrate temperatures ranging between 400 to 700 °C and N2O background pressures between 10−5 to 10−2 Torr. The carrier type and conduction were found to be very sensitive to substrate temperature and N2O deposition pressure. P-type conduction was observed for films grown at pressures between 10−3 to 10−2 Torr. The Zr–N codoped ZnO films grown at 550 °C in 1×10−3 Torr of N2O show p-type conduction behavior with a very low resistivity of 0.89 Ω-cm, a carrier concentration of 5.0×1018 cm−3, and a Hall mobility of 1.4 cm2 V−1 s−1. The structure, morphology and optical properties were also evaluated for both N-doped and Zr–N codoped ZnO films. [ABSTRACT FROM AUTHOR]