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Top-Gate Stack Engineering Featuring a High-κ Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides
Document Type
Article
Author
Lin, Z.; Wu, X.; Cott, D.; Shi, Y.; Medina Silva, H.; Sergeant, S.; Conard, T.; Meersschaut, J.; Nalin Mehta, A.; Groven, B.; Morin, P.; Asselberghs, I.; Lockhart de la Rosa, C.J.; Kar, G.S.; Lin, D.; Delabie, A.
Source
In: ACS Applied Electronic Materials. (ACS Applied Electronic Materials, 25 June 2024, 6(6):4213-4222)
Subject
Language
English
ISSN
26376113

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