학술논문
A three-transistor threshold voltage model for halo processes
Document Type
Conference
Author
Source
Digest. International Electron Devices Meeting, Electron devices meeting Electron Devices Meeting, 2002. IEDM '02. International. :113-116 2002
Subject
Language
Abstract
A closed-form expression for the threshold voltage, V/sub t/, of MOSFETs fabricated with halo processes is described. The proposed approach accurately captures the length dependent V/sub t/ behavior under different drain and body bias conditions and temperature. In addition, the necessity of considering separate V/sub t/ expressions for current and capacitances is discussed. A doping transformation is employed to obtain equivalent channel dopings, necessary for charge-sheet models that do not rely on the threshold voltage concept.