학술논문
A 0.1mm/sup 2/, Digitally Programmable Nerve Stimulation Pad Cell with High-Voltage Capability for a Retinal Implant
Document Type
Conference
Author
Source
2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International. :89-98 2006
Subject
Language
ISSN
0193-6530
2376-8606
2376-8606
Abstract
A 0.1mm 2 autonomous and digitally programmable nerve stimulation pad cell in 0.35μm HVCMOS is used in a 232-electrode retinal implant. It provides greater than plusmn15V swing at the electrode in order to supply suitable stimulation currents into large electrode impedances. Customized ESD protection is used on all electrodes. Charge balancing is applied to prevent electrolysis