학술논문

Modeling of a Highly Sensitive Lorentz Force-Based CMOS-MEMS Magnetometer for E-Compass Applications
Document Type
Conference
Source
2020 8th International Conference on Intelligent and Advanced Systems (ICIAS) Intelligent and Advanced Systems (ICIAS), 2020 8th International Conference on. :1-4 Jul, 2021
Subject
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Semiconductor device modeling
Micromechanical devices
Solid modeling
Lorentz covariance
Magnetometers
Simulation
Resonant frequency
Lorentz Force
MEMS
Resonator
CoventorWare
and CMOS technology
Language
Abstract
Magnetometers are devices used to measure the magnetic field, however, most commercialized magnetometers are facing several disadvantages. If not being of low sensitivity, the device attains a high cost and high-power consumption. Thus, it is a necessity to mathematically design and model CMOS-MEMS magnetometer which will be able to detect low magnetic fields. A fine simulation using ConventorWare software is applied to validate the designed magnetometer model. In this paper, Lorentz force and an integration of CMOS and MEMS technologies were implemented The designed magnetometer is made in one mode (out-of-plane) to function in one axis (z-axis), and the CMOS-MEMS magnetometer output signal is determined by piezoresistive sensing technique as piezoresistors are connected in full Wheatstone bridge circuit. A 3-D solid model was created and meshed based on the theoretical calculations and data. Simulation results shows that theoretical and simulation results are almost the same, except that resonance frequency is of 11% difference and 11.6% for quality factor. The average percentage difference between calculated and simulated displacement when magnetic field is detected to be of 2.801%.